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Clean Room Overview

Clean Room Packed
Ultra-Flat Silicon Wafers




6" Silicon Wafer
Ultra-Flat 4" Silicon Wafer

Ultra-Flat 4" Silicon Wafers

Ultra-Flat 4" Silicon Wafer for demanding substrate studies. Can also be used as substrate for AFM or SEM samples by dicing the wafer into smaller pieces using a Scriber and the Wafer Cleaving / Glass Breaking Pliers. The 4" ultra-flat silicon wafer is shipped in a  4" wafer carrier.

Properties for 4" (100mm) Ultra-Flat Wafer:

  • Orientation: <100>
  • Type/Dopant: P/Boron
  • Grade: Prime / CZ Virgin
  • Resistivity: 10-20 Ohm-cm
  • Thickness: 525µm +/- 20µm
  • TTV: <4.00µm
  • SFPD: <2.0µm
  • Warp: ≤30µm
  • Bow: ≤20µm
  • Particles: ≤20@≥0.3µm
  • Front Surface: Polished
  • Back Surface: Etched
  • Flat: 2 per SEMI Standard
  • Site Flatness: <2.0µm
  • Roughness: Typically 2-3Å

Prod # Description Unit Price Order / Quote
21610-4 Ø4" Ultra-Flat Silicon Wafer, Type <100> each $92.00
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6" Silicon Wafer
Ultra-Flat 6" Silicon Wafer

5 x 5mm SiO2 diced wafer
5 x 5mm, 5 x 7mm,
10 x 10mm stealth-diced
Ultra-Flat Wafers

Ultra-Flat 6" Silicon Wafers

Ultra-Flat 6" diameter Silicon Wafer for demanding substrate studies. The 6" ultra-flat silicon wafer is shipped in a 6" wafer carrier.

Also available as 5 x 5mm, 5 x 7mm, 10 x10mm stealth-diced dies in Gel-Pak® boxes. Stealth dicing eliminates edge-chipping and cutting debris associated with saw dicing, providing the cleanest, most uniform product possible. All products are packed in class 10 clean room conditions.

Properties for 6" (150mm) Ultra-Flat Wafer:

  • Material: CZ Virgin Silicon Wafer
  • Grade: Prime
  • Diameter: 150mm
  • Orientation: <100>
  • Type/Dopant: P/Boron
  • Resistivity: 10-20 ohm-cm
  • Thickness: 675µm +/- 20µm
  • TTV: ≤2µm
  • Site Flatness: <=1µm
  • Warp: ≤30µm
  • Bow: ≤20µm
  • Particles: ≤30@≥0.2µm
  • Front Surface: Polished
  • Back Surface: Etched
  • Flat: 1 per SEMI Standard

Prod # Description Unit Price Order / Quote
21610-6 Ø6" Ultra-Flat Silicon Wafer, Type <100> each $104.50
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21610-55 5 x 5mm stealth-diced Ultra-Flat Wafer, Type <100>, in a Gel-Pak® box box/25 141.70
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21610-57 5 x 7mm stealth-diced Ultra-Flat Wafer, Type <100>, in a Gel-Pak® box box/18 141.70
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21610-510 10 x 10mm stealth-diced Ultra-Flat Wafer, Type <100>, in a Gel-Pak® box box/6 141.70
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6" Silicon Wafer
Ultra-Flat Thermal 6" SiO2 Wafer

5 x 5mm SiO2 diced wafer
5 x 5mm Diced Ultra-flat Thermal SiO2 Substrates

Ultra-Flat Thermal SiO2 Substrates

The Ultra-Flat SiO2 substrates consist of a 200nm thermally grown amorphous SiO2 film on an ultra-flat silicon wafer. SiO2 is one of the most characterized materials and is widely used in semiconductor manufacturing, thin film research and as substrate for growing cells. It can be directly used as substrate for AFM and SEM imaging. The ultra-flat thermal silicon dioxide substrates are available in 6" wafer and conveniently diced 5 x 5mm, 5 x 7mm and 10 x 10mm chips. The 6" wafer is shipped in a 6" wafer carrier, the diced pieces are shipped in a Gel-Pak® box.

The special clean dicing process involves coating the wafer with photo resist before dicing and removing it after dicing which produces debris-free SiO2 substrates. All products are packed in class 10 clean room conditions.

Properties for thermal SiO2 substrates:

  • Material: CZ Virgin Silicon Wafer
  • Grade: Prime
  • Diameter: 150mm
  • Orientation: <100>
  • Type/Dopant: P/Boron
  • Resistivity: 10-20 Ohm-cm
  • Thickness: 675 +/- 25µm
  • TTV: ≤2µm
  • Site Flatness: ≤1µm
  • Warp: ≤30µm
  • Bow: ≤20µm
  • Particles: ≤20@≥0.2µm
  • Front Surface: Polished
  • Back Surface: Etched
  • Flat: 1 per SEMI Standard
  • 2000A +/- 5% Thermal Oxide

Prod # Description Unit Price Order / Quote
21620-6 200nm Thermal Oxide on ø6" Ultra-Flat Wafer, Type <100>, in 6" wafer carrier each $198.75
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21620-55 200nm Thermal Oxide on 5 x 5mm diced Ultra-Flat Wafer, Type <100>, in Gel-Pak® box box/25 158.35
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21620-57 200nm Thermal Oxide on 5 x 7mm diced Ultra-Flat Wafer, Type <100>, in Gel-Pak® box box/18 P.O.R.
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21620-510 200nm Thermal Oxide on 10 x 10mm diced Ultra-Flat Wafer, Type <100>, in Gel-Pak® box box/6 158.35
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6" Silicon Wafer
Ultra-Flat SiNx Coated Wafer

5 x 5mm SiO2 diced wafer
5 x 5mm Diced Ultra-Flat SiNx on Silicon Substrates

NEW Ultra-Flat SiNx Coated Substrates

The Ultra-Flat SiNx Substrates consist of ultra-flat silicon wafers coated with 200nm of amorphous nonstoichiometric ultra low-stress silicon nitride, similar to our silicon nitride grids. The ultra-flat SiNx substrates are available in 6" wafer and conveniently diced 5 x 5mm, 5 x 7mm and 10 x 10mm chips. The 6" wafer is shipped in a 6" wafer carrier; the diced pieces are shipped in a Gel-Pak® Box.

The wafers are stealth diced, a special clean dicing process which produces debris-free substrates. All products are packed in class 10 clean room conditions.

Properties for thermal SiNx substrates:

  • Material: CZ Virgin Silicon
  • Wafer Grade: Prime
  • Diameter: 150mm
  • Orientation: <100>
  • Type/Dopant: P/Boron
  • Resistivity: 10-20 Ohm-cm
  • Thickness: 675 +/- 25µm
  • TTV: ≤2µm
  • Site Flatness: ≤1µm
  • Warp: ≤30µm
  • Bow: ≤20µm
  • Front Surface: Polished
  • Back Surface: Etched
  • Flat: 1 per SEMI Standard
  • 2000A +/- 100A SiNx

Prod # Description Unit Price Order / Quote
21630-6 NEW 200nm SiNx on Ultra-Flat Silicon Wafer, in 6" wafer carrier each $420.00
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21630-55 NEW 200nm SiNx on Ultra-Flat Silicon Wafer, 5 x 5mm pieces in a Gel-Pak® box box/25 225.00
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21630-57 NEW 200nm SiNx on Ultra-Flat Silicon Wafer, 5 x 7mm pieces in a Gel-Pak® box box/18 225.00
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21630-510 NEW 200nm SiNx on Ultra-Flat Silicon Wafer, 10 x 10mm pieces in a Gel-Pak® box box/6 225.00
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Silicon Nitride Disks for SEM, FESEM, AFM
Silicon Nitride Blank

Silicon Nitride Coated 3mm Discs (blanks)

These 3mm silicon discs have an ultra flat (RA of 0.45 ±0.02nm) 50nm ultra low stress silicon nitride layer (Si3N4) on both sides and can be used for a number of applications:

  • Specimen mounts for SEM and FESEM applications
  • Specimen discs for AFM applications which need a Si3N4 background
  • Blanks to build the PELCO® Liquid Cell™ together with the PELCO® Silicon Nitride Membrane

More Information on Silicon Nitride Support Films


Specifications:
  • Film thickness: 50nm ultra low stress Si3N4 on both sides
  • Disc thickness: 200µm silicon support
  • Disc diameter: 3mm
  • Surface roughness: The RMS (Rq) is 0.65 +/- 0.06nm which gives a mean roughness (Ra) of 0.45 +/- 0.02nm
  • Packaging The PELCO® Silicon Nitride Discs are packaged under cleanroom conditions in a vial holding 10 discs.

MSDS (367KB PDF)

Prod # Description Unit Price Order / Quote
21555-10 PELCO® Silicon Nitride Ø3mm Disks vial/10 $115.00
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